NIST is working to improve magnetic sensor technology, specifically focusing on Magnetic Tunnel Junction (MTJ) sensors. These sensors are becoming increasingly popular due to their high sensitivity, small size, low cost, and low power consumption. However, the complexity of designing MTJ sensors has made optimization challenging.
NIST has developed a master equation that governs the lowest field an MTJ sensor can detect, allowing them to vary parameters and determine how sensitivity depends on Tunneling Magnetoresistance (TMR), sensor size, power consumption, and Wheatstone bridge configuration. They have tested this approach using existing commercial MTJ sensors and found it predicts performance well.
NIST’s short-term goals include optimizing materials properties, integrating TMR sensors with MEMS oscillators, and migrating to a Wheatstone bridge configuration to achieve the greatest sensitivity possible. Their longer-term goals involve transferring this technology to their customers.
Source: https://www.nist.gov/programs-projects/future-directions-magnetic-sensors
Keywords: Magnetic Tunnel Junctions, Tunneling Magnetoresistance Effect, Wheatstone Bridge
