Index of Semiconductor Process Gases – Carbon Monoxide | NIST

The article presents a comprehensive table of thermophysical properties for carbon monoxide (CO) relevant to semiconductor manufacturing. Key properties include:
– Molecular weight: 28.0104 g/mol
– Normal boiling point: 81.7 K
– Triple point: 68.15 K
– Critical pressure: 3.499 MPa
– Critical temperature: 132.92 K
– Critical volume: 0.092166 m³/kmol

The table provides data for various properties at different temperatures, including:
– Heat capacity at constant pressure (Cp0(T)/R)
– Vapor pressure
– Molar volume (B(T))
– Temperature coefficient of molar volume (dB/dT·T)
– Heat capacity at constant volume (C(T))
– Thermal conductivity (λ)
– Viscosity (η)

The data is sourced from multiple references and includes estimated uncertainties for each property. The table is designed to support semiconductor manufacturing applications where precise fluid properties are critical.

Source: https://www.nist.gov/pml/sensor-science/fluid-metrology/database-thermophysical-properties-gases-used-semiconductor-5

Keywords: Carbon Monoxide, Thermophysical properties, Semiconductor application

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