NIST researchers are developing advanced electron-based measurement techniques to characterize the electronic properties of new materials and systems for quantum devices and electronic applications. The team uses photoemission spectroscopy (PES) and other electron-based methods to measure energy levels, work functions, and band structures of materials like gallium nitride (GaN) and gallium oxide (Ga2O3).
The research focuses on understanding how electronic properties vary with crystallographic planes and fabrication methods, which is crucial for integrating new materials into devices. Collaborations with other institutions, like the Helmholtz Zentrum Berlin, are enabling access to advanced measurement techniques for radiation-sensitive materials.
The ultimate goal is to develop metrology techniques that can accurately measure electronic and chemical properties of novel materials, enabling the advancement of quantum devices, flexible electronics, and power electronics.
Keywords: semiconducting materials, electron-based analytical methods, photoemission, electronic properties
