The National Institute of Standards and Technology (NIST) has established the Atom-Scale Device Group to advance quantum and electronic technologies at the atomic and nanoscale level. The group focuses on developing and understanding various systems, including dopant-based and nanofabricated Si devices for quantum technologies, quantum simulation, quantum sensing, and charge sensing. They also study spins in nanoscale and atomic scale solid-state systems, as well as hybrid solid-state systems.
The group combines theoretical and experimental approaches to push the boundaries of understanding and application in this regime. Theoretical work explores new applications in nanoscale and quantum technologies, while experimental work develops precision measurement tools and collects essential data for these applications. The group aims to explore the ultimate atomic-scale limit for traditional Si electronic devices and implement atomic-scale quantum technologies in Si.
Key areas of research include:
– Developing isotopically enriched Si for quantum technology
– Investigating novel materials for spintronics
– Creating semiconductor quantum dots as sources of single photons, entangled photons, and charge and spin qubits
– Developing nanomechanical devices that can approach the quantum ground state, opening the way to macroscopic quantum systems
The group’s work has the potential to significantly advance quantum technologies and their applications in various fields.
Source: https://www.nist.gov/pml/nanoscale-device-characterization-division/atom-scale-device-group
Keywords: Semiconductor, Quantum, Nanoscale, Atomic, Device
