Title: NIST Discloses Methods for Uniformly Charging Nanocrystals
NIST researchers have developed methods for uniformly charging nanocrystals, enabling the fabrication of high-performance nanoscale devices with identical electro-optical properties across large areas. The disclosed techniques involve facet-selective passivation and charge injection, allowing for the formation of structurally uniform metal-semiconductor and semiconductor-semiconductor interfaces.
The invention builds upon NIST’s previous work on fabricating individual nanowires in-plane of a surface with controlled orientation and location. By teaching how to selectively choose a nanocrystal facet for metallization or overgrowth with other semiconductors, the methods enable the production of nanoscale light emitting diodes, lasers, and transistors on a large scale.
This advancement addresses the challenges of limited scale production of second and third-generation semiconductor technologies and devices. The ability to fabricate high-performance nanoscale devices with uniform properties across large areas represents a significant step forward in the field of nanotechnology, with potential applications ranging from deep-ultraviolet laser sources to trace chemical detection.
Source: https://www.nist.gov/patents/light-article
Keywords: nanoscale, nanocrystals, electro-optical properties
