NIST researchers have developed high-performance topological insulator transistors (TINFETs) using single-crystalline Bi2Se3 nanowires. The transistors exhibit sharp turn-on current, zero off-state current, and well-saturated current-voltage properties, making them suitable for both digital and analog circuits. The topological insulator’s metallic surface conduction is isolated from the bulk semiconductor and can be tuned by an external gate. The transistors also show large effective mobility and a unique magneto-electric effect where the threshold voltage shifts with an external magnetic field. NIST has proposed a novel three-terminal magnetic field sensor based on this effect, representing a different approach compared to conventional two-terminal magnetoresistance sensors.
Source: https://www.nist.gov/patents/high-performance-topological-insulator-transistors
Keywords: topological insulator, field effect transistor, nanowires
