The article discusses the importance of understanding electron-solid interactions for accurate interpretation of scanning electron microscopy (SEM) images in semiconductor manufacturing. Current limitations in SEM accuracy are due to incomplete models of electron-solid interactions, particularly secondary electron generation and transport.
The project aims to improve these models by:
1. Better understanding secondary electron generation and transport
2. Developing accurate simulations of backscattered electron yields from higher energy beams
3. Creating models that account for charging in insulating materials
Improved electron-solid interaction models will enhance the quantitative accuracy of SEM measurements for critical dimension control in advanced semiconductor manufacturing. The findings will also have synergistic applications to other electron-beam techniques and spectroscopies.
Source: https://www.nist.gov/programs-projects/electron-solid-interactions
Keywords: Electron-solid interactions, SEM imaging, secondary electron yield
