The National Institute of Standards and Technology (NIST) is developing a program to leverage the quantum properties of color center point defects in semiconductors for various applications. These defects in materials like diamond and silicon carbide exhibit quantum properties such as spin and optical degrees of freedom, enabling applications in quantum sensing, single-photon generation, and quantum communication.
The program aims to overcome technical challenges in color center technology, such as nonuniform properties and low-fidelity readout. NIST is developing spectroscopic characterization protocols and materials processing techniques to control the environment surrounding the defects and characterize color center properties. They are also working on integrated photonic detection schemes and novel fabrication methods to improve device performance and scalability.
One focus area is silicon-based quantum centers, which offer potential advantages in terms of fabrication, scalability, and integration with electronics and photonics. However, challenges remain in understanding the structure and preparation of these centers and incorporating them with conventional devices without compromising functionality.
The program’s ultimate goal is to develop solid-state quantum center platforms that can be used for various quantum applications, such as quantum sensing and quantum communication, while overcoming the technical challenges inherent in these host materials.
Source: https://www.nist.gov/programs-projects/spectroscopy-and-application-solid-state-quantum-centers
Keywords: Quantum , Sensing , Metrology , Quantum , Centers , Photonic
