Title: NIST Develops Advanced Metrology Techniques for Nanoscale Interface Characterization
Summary:
The National Institute of Standards and Technology (NIST) is developing new metrology techniques to enable atomic-scale measurement of electric fields at nanoscale interfaces. This is crucial for understanding and controlling the behavior of advanced electronic devices as they continue to shrink to atomic dimensions.
The project focuses on developing standardized protocols for collecting and analyzing differential phase contrast four-dimensional scanning transmission electron microscopy (DPC 4D-STEM) data. This technique allows for precise measurement of electric fields at the atomic level by analyzing how electron probes are deflected by sample electric fields.
The ability to accurately measure and control nanoscale electric fields is essential for managing band offsets – the key factor determining contact resistance, threshold voltage, leakage current, and reliability in electronic devices. As devices become increasingly complex and integrated, reliable nanoscale measurements are critical for device development, failure analysis, and predictive modeling.
The project is part of the CHIPS for America Metrology Program, which aims to provide the semiconductor industry with the advanced metrology capabilities needed to meet future technology requirements. The data obtained during the development of these techniques will provide valuable guidance for achieving desired band offsets in future device designs.
Keywords: electric field, atomic-scale, band offsets, nanoscale, metrology
