Researchers at NIST have developed a new method for growing well-aligned semiconductor nanowires using gold nanoparticles as anchors. The technique allows for precise control over the orientation of the nanowires, which are only 3 nanometers in diameter. This is a significant improvement over previous methods that produced nanowires over 10 nanometers in diameter.
The NIST method involves placing gold nanoparticles in rows on a sapphire substrate, which serve as starting points for growing the nanowires. By adjusting the size of the gold particles, researchers can control the orientation of the nanowires, which can be horizontal, vertical, or at a 60-degree angle from the surface.
This new technique has the potential to revolutionize the field of nanotechnology by enabling the creation of powerful, compact sensors and other devices using atomic-scale components. The ability to precisely align and position nanowires could lead to the development of more efficient and reliable nanoelectronic devices, such as photodetectors and light-emitting elements.
Source: https://www.nist.gov/news-events/news/2004/11/gold-nano-anchors-put-nanowires-their-place
Keywords: nanowires, semiconductor, zinc oxide
