The National Institute of Standards and Technology (NIST) has developed a groundbreaking technology called the Gateless P-N junction metrolog, which addresses a critical issue in resistance metrology. This invention allows users to output multiple quantum resistances, similar to a variable resistor, using ultraviolet photolithography (UVP) to create sharply adjoining regions of varying charge in epitaxial graphene (EG) devices.
The Gateless P-N junction metrolog is particularly well-suited for mass production and can be applied to various semiconductor industries. It eliminates the need for bulky equipment and improves resistance uncertainty. The technology has the potential to benefit the American public and economy by introducing new technologies that can be licensed and used in various industries.
NIST encourages interested parties to explore this groundbreaking new technology and contact the Technology Partnerships Office for more information.
Keywords: Graphene, Patent, Metrology
