Researchers at the National Institute of Standards and Technology (NIST) have developed a new method to adjust the resistance of semiconductor devices by creating tiny pits in specific areas. This technique could lead to more advanced magnetic sensors for ultra-dense data storage devices.
The new process involves using highly charged ions to create nanoscale pits in the buffer layer of magnetic sensors. This allows engineers to tailor the electrical resistance of individual layers without changing other parts of the device. The method has been demonstrated to adjust resistance over three orders of magnitude.
NIST researchers are now working on incorporating these modified layers into working magnetic sensors. The technique alters only a single step in the fabrication process, making it suitable for future scale-up. NIST has filed a provisional patent for the work.
Source: https://www.nist.gov/news-events/news/2007/08/nanoscale-blasting-adjusts-resistance-magnetic-sensors
Keywords: Magnetic, Sensors, Resistance, Layers, Pits
