Researchers at NIST have discovered that thin magnetic layers of a semiconductor material can exhibit antiferromagnetic coupling, where adjacent layers spontaneously align their magnetization in opposite directions. This finding could lead to “spintronic” logic circuits that can both store and process data using magnetic fields, rather than just storing data in conventional metallic materials.
The discovery was made using polarized neutron reflectometry, which bounces a neutron beam off the material to study its magnetic properties. The researchers found that at low temperatures, the layers aligned antiferromagnetically, but aligned parallel when a magnetic field was applied. While the phenomenon only occurs at very cold temperatures in the current material, the results could help theorists develop room-temperature devices with similar properties.
The potential impact of this discovery is significant, as it could lead to smaller, faster gadgets that combine data storage and processing in a single semiconductor material, rather than requiring separate storage and processing devices. This could revolutionize consumer electronics and computing devices.
Keywords: Magnetic, Semiconductors, Spintronic, Logic Circuits, Magnetization
