Researchers at NIST have developed a new method for creating tiny, highly efficient ultraviolet (UV) light-emitting diodes (LEDs) using nanowires. The key innovation is a batch fabrication process that allows for the rapid production of these nanoscale LEDs, which are made from a single compound called gallium nitride (GaN).
The new technique combines photolithography, wet etching, and metal deposition with the alignment of nanowires using an electric field. This eliminates the need for the time-consuming process of placing each nanowire individually, making the production process much more efficient and scalable.
The resulting GaN p-n junction LEDs emit UV light with a peak wavelength of 365 nanometers, and are highly stable and reliable, with excellent thermal and operational stability. The researchers believe their technique could be adapted for other nanowire structures and applications requiring large area nanoscale light sources, such as data storage and biological sensing.
Source: https://www.nist.gov/news-events/news/2007/05/new-fabrication-technique-yields-nanoscale-uv-leds
Keywords: nanowires, gallium nitride, light-emitting diodes (LEDs)
