NIST has developed a new type of spintronic device that could revolutionize computing by reducing energy consumption and heat generation. The device, which combines memristor and spin valve technologies, allows for the efficient switching of spin currents with minimal energy input.
The key innovation is a simple, fundamental building block that can serve as an on-off switch for spin currents, an interconnect between spintronic components, and an interface between magnetic and electronic features. This enables the creation of multifunctional devices with low energy consumption and fast switching times.
The device works by polarizing electrons and controlling their flow through a magnetic layer. By applying a voltage in one direction, copper atoms are drawn into the oxide layer, creating low-resistance channels that allow spin-polarized current to flow. Reversing the voltage causes the copper to recede, blocking the current flow.
This technology could potentially replace conventional CMOS transistors and capacitors, offering a more energy-efficient alternative for future computing systems. The NIST patent covers devices made with various materials, and the inventors believe their approach could help overcome significant technological barriers for spintronics to become a viable contender for beyond-CMOS microelectronics.
Keywords: Insulators, Metal, Oxide, Spin, Tantalum
