Researchers at NIST have discovered that graphene’s ideal electronic properties are significantly altered when layered on a substrate, creating hills and valleys that impede electron flow. This challenges the assumption that graphene’s high electron mobility is preserved in real-world device conditions.
The NIST team created a graphene-based “sandwich” structure to study how the substrate affects electron behavior. They found that variations in the substrate’s electrical potential create localized electron pools, reducing mobility. Under high magnetic fields, electrons become trapped in quantum dots, further limiting their movement.
This research highlights the importance of understanding graphene’s behavior in practical device configurations. The findings suggest that achieving graphene’s full potential in electronic devices will require careful substrate engineering to minimize disruptive interactions.
Source: https://www.nist.gov/news-events/news/2011/01/real-world-graphene-devices-may-have-bumpy-ride
Keywords: graphene, electrons, electricity, quantum dots, scanning tunneling microscope
