This article explains how magnetic tunnel junctions and memristors work as components in advanced computing technologies. Magnetic tunnel junctions use two thin magnetic layers separated by an insulator. Electrons can quantum mechanically tunnel through the insulator, and the resistance depends on whether the magnetic layers are aligned (parallel) or opposite (antiparallel). This makes it easy to read their state and change it using spin torque, which is useful for creating fast, dense, and non-volatile memory used in modern electronics.
Memristors are similar in that they have two electrodes with an insulating layer in between. When current passes through, a conductive filament forms in the insulator, changing the device’s resistance. This allows memristors to act as continuously variable resistors, making them useful for new types of computing and memory systems. Both technologies are helping to advance next-generation electronic devices.
Source: https://www.nist.gov/programs-projects/novel-hardware-alternative-computing
Keywords: magnetic tunnel junctions, memristors, spin torque
