Researchers at NIST have developed advanced fabrication techniques for quantum devices using ultra-high vacuum (UHV) systems. Key findings include:
1. Plasma oxidation of aluminum produces high-quality tunnel barriers with very stable resistance over time, even better than thermal oxidation methods.
2. Aluminum oxide formed with plasma confinement shows reduced charge defect densities, crucial for sensitive quantum devices.
3. Single-electron transistors (SETs) incorporating plasma-oxidized aluminum oxides exhibit excellent stability and charge sensitivity, comparable to the best silicon SET devices.
4. The team is working on integrating these high-quality materials into technologically relevant devices, such as superconducting quantum information devices and microwave resonators.
5. Future plans include combining MOS, superconducting, and metal SET devices to achieve higher functionality and reveal material limitations.
The research demonstrates significant progress in fabricating stable, high-quality materials for quantum devices, which is essential for advancing quantum technologies.
Source: https://www.nist.gov/programs-projects/precision-materials-quantum-devices
Keywords: Aluminum Oxide, Plasma Oxidation, Tunnel Barrier, Superconducting Quantum Devices, Aluminum Oxide Quality
