Title: NIST Discloses Advanced Charge Detector for Ultrasensitive Biosensing
NIST has disclosed a novel charge detector technology that operates at quantum capacitance limits, enabling highly sensitive biosensing capabilities. The detector utilizes a dual-gated field effect transistor (FET) with a transition metal dichalcogenide (TMD) layer on the analyte gate to achieve unprecedented sensitivity.
Key components of the detector include:
1. A charge sensor that detects charged analytes and generates a charge signal
2. A transducer that converts the charge signal into a transduction signal
3. A sensitivity controller that adjusts the detector’s sensitivity based on the transduction signal
The process involves applying a drain voltage to the source and drain electrodes while controlling the gate voltage. The drain current is monitored to detect the presence of the analyte at the analyte gate.
This technology represents a significant advancement in quantum-based biosensing, with potential applications in medical diagnostics, environmental monitoring, and other fields requiring highly sensitive detection capabilities.
Source: https://www.nist.gov/patents/charge-detector-and-process-sensing-charged-analyte
Keywords: quantum capacitance, dual-gated field effect transistor, charge sensor
