This article discusses research conducted at NIST using an Electron Beam Ion Trap (EBIT) to study highly charged ions and their interactions. The EBIT is used to create, trap, and excite ions in various charge states, allowing researchers to study their properties and interactions.
Key findings include:
– Electron impact ionization cross sections were calculated using a phenomenological theory developed by Yong-Ki Kim at NIST
– Radiative and dielectronic recombination processes were studied in scandium-like and titanium-like barium ions
– A computer simulation was developed to model ion motion within the EBIT trap
– A program was installed to predict charge state balance inside the EBIT
– Lifetime measurements of excited states were conducted using fast voltage switching
– An extraction system was built to remove ions from the EBIT for further study
The research has applications in understanding atomic structure, plasma physics, and ion-surface interactions, with potential implications for semiconductor manufacturing and other technologies.
Keywords: Ionization, Recombination, EBIT, Ions, Spectroscopy
