The National Institute of Standards and Technology (NIST) has developed a comprehensive Plasma Process Metrology Program to help semiconductor manufacturers better understand and control plasma processes. The program focuses on developing and evaluating measurement techniques to characterize plasma properties, providing experimental data, and creating models to gain insight into complex plasma behaviors.
Key areas of focus include:
– Developing models for RF bias effects to help industry select optimal operating frequencies
– Studying electrical endpoint detection to improve control of plasma etching processes
– Measuring electron number density using a new wave cut-off method
– Investigating the effects of RF bias on electron density across the entire frequency range used in industrial plasma processes
The program’s work provides recommendations for the plasma etching industry, identifying reliable electrical signals for endpoint detection based on fundamental reasons. The research has been published in various journals and conferences, demonstrating the program’s impact on advancing plasma process metrology.
Source: https://www.nist.gov/programs-projects/plasma-process-metrology
Keywords: Plasma, Metrology, Models, Electron Density, Endpoint Detection
