Title: NIST’s Advanced MBE Facility Enables Cutting-Edge Quantum and Optoelectronic Research
NIST’s Applied Physics Division operates a state-of-the-art molecular beam epitaxy (MBE) system capable of growing highly precise compound semiconductor structures with atomic-level control. The dual-chamber MBE system allows researchers to create a wide range of advanced materials and devices, including:
– Quantum dots and nanowires for quantum computing and cryptography applications
– Epitaxially layered structures for high-performance lasers, photodetectors, and LEDs
– Test structures for optical, electrical, and mechanical measurements
The MBE-grown materials and devices have numerous potential applications, such as:
– Quantum optical metrology and communications
– Nanoscale electromagnetic measurements for next-generation solar cells and LEDs
– High-precision sensors
This cutting-edge facility enables NIST researchers to develop and characterize the advanced materials and devices needed for future quantum technologies and optoelectronic applications.
Source: https://www.nist.gov/laboratories/tools-instruments/molecular-beam-epitaxy-mbe-facility
Keywords: Compound Semiconductor, Quantum Dots, Nanowires, Optoelectronic Metrology, Single Photon Detectors
