The National Institute of Standards and Technology (NIST) is developing advanced microscopy techniques using deep ultraviolet (DUV) and extreme ultraviolet (EUV) light to precisely measure and characterize nanoscale structures. These techniques, known as Scatterfield Imaging Microscopy and Computational Nanoscale Microscopy, will enable more accurate manufacturing of next-generation semiconductor devices.
The new methods involve manipulating the illumination light at the back focal plane of the microscope objective to create specific intensity and phase distributions. This allows for precise characterization of nanoscale features such as linewidth, pitch, height, and defects in arrays. The techniques also use computational methods to reconstruct 3D images of nanoscale structures with sub-nanometer sensitivity and low uncertainty.
The development of these advanced microscopy techniques is expected to significantly improve the manufacturing process for next-generation computing devices by providing more accurate and reliable measurements of nanoscale structures. The research is still ongoing, but the techniques show promise for enabling the production of smaller, faster, and more energy-efficient electronic devices in the future.
Source: https://www.nist.gov/programs-projects/duveuv-nanoscopy-imaging-nanostructures
Keywords: quantum, sensing, metrology
