Researchers at NIST have discovered a new phenomenon in transistor behavior that could impact future microelectronics measurements. When measuring the threshold voltage shift in p-type transistors under accelerated stress conditions, they observed that the threshold voltage not only returned to its pre-stressed state but briefly exceeded it, allowing the transistor to behave better than before the stress.
This unexpected recovery phenomenon, which involves both positive and negative charge dynamics, suggests that current transistor lifetime prediction methods may need to be revised as devices continue to shrink to nanoscale dimensions. The NIST team’s ultra-fast and sensitive measurements revealed that during recovery, positive charges dissipated faster than electrons, creating a momentary negative charge and enhanced conductivity.
The discovery could lead to more accurate lifetime predictions for future nanoscale electronics, as manufacturers will need to consider both positive and negative charge dynamics in their models. The NIST researchers plan to focus on developing and refining measurement techniques to better understand and quantify this electron trapping phenomenon.
Keywords: Metrology, Nanoscale, Transistors, Electronics, Quantum
