Researchers at NIST are developing a new simulation method using causal Green’s functions to model thermal transport in nanoscale semiconductors, specifically gate-all-around (GAA) transistors. This method addresses the challenge of accurately modeling heat conduction in complex 3D semiconductor structures, which is crucial for designing efficient and long-lasting nanoscale devices.
The causal Green’s function (CGF) method is particularly well-suited for this task, as it allows for efficient, multiscale, and multiphysics simulations of phonon propagation in semiconductors. This will enable industrial designers to perform virtual experiments and explore various design options quickly and cost-effectively, without the need for physical prototypes. The development of this simulation technique has the potential to significantly impact the semiconductor industry by improving the efficiency and lifespan of nanoscale devices.
Keywords: Thermal Transport, Nanoscale Semiconductors, Green’s Function Method, Simulation Technique, Multiphysics Computations
