This article discusses the capabilities and recent applications of aberration-corrected scanning transmission electron microscopy (STEM), a powerful tool for imaging and analyzing materials at the atomic level. It allows for high-resolution imaging and mapping of chemical composition, crystal structure, strain, and electric fields in complex materials. This is especially important as devices become smaller and more advanced, requiring precise atomic-scale measurements for design and performance. The article highlights how STEM has been used to investigate superconducting quantum interference devices (SQUIDs), revealing structural issues that were corrected to restore full device functionality.
The article also describes how STEM is used to study novel materials, such as boron nitride thin films, revealing unexpected structures like turbostratic BN, which has different properties than previously assumed. Additionally, it introduces a new method for determining crystal polarity without needing special reference samples, improving the accuracy of material analysis. These advancements in STEM technology support the development and optimization of next-generation electronic and quantum devices.
Keywords: aberration-corrected STEM, SQUID devices, X-ray chemical mapping
