This article discusses a project by NIST aimed at improving the measurement of mechanical strain in semiconductor devices, which is crucial for both performance and reliability. Strain is intentionally used in devices like CMOS to improve efficiency, but it can also cause issues like cracking. Accurate strain measurement at the nanoscale is needed for next-generation devices, and NIST has developed reference materials and new techniques to achieve this. These materials, made of strained silicon-germanium films, help calibrate and verify measurement tools.
The article also highlights challenges in measuring strain in complex 3D structures like nanoscale fins and through-silicon vias (TSVs). New methods, such as improved electron backscatter diffraction analysis and enhanced simulation tools, are being developed to address these issues. These advancements support better process control and design optimization in semiconductor manufacturing. While the project is ongoing, the techniques developed are expected to have a significant impact on both semiconductor and quantum device development.
Source: https://www.nist.gov/programs-projects/strain-measurement-semiconductor-devices
Keywords: strain metrology, quantum devices, reference materials
