Title: NIST Funds GE Research to Develop Advanced Power Semiconductor Interface Characterization
NIST has awarded a grant to General Electric’s Global Research division to develop new measurement techniques for characterizing the interface between silicon carbide (SiC) and silicon dioxide (SiO2) in high-power metal oxide semiconductor field-effect transistor (MOSFET) devices. These devices are crucial for efficiently routing large amounts of electrical power from renewable energy sources like wind and solar.
The project aims to create novel electrical and physical characterization methods to better understand and optimize the SiC-SiO2 interface, which is critical for the performance and reliability of high-power MOSFETs. The research will be conducted by GE Global Research in collaboration with The Pennsylvania State University.
Public contact:
Todd Alhart
518-387-7914
alhart@ge.com
NIST Program Office Contact:
Jason Boehm
301-975-8678
Jason.boehm@nist.gov
Keywords: quantum devices, quantum sensing, quantum metrology
